Products
Application
Reference
Quality
Support
News
About Us
Login

IRF840

Overview Parameters Features Applications Documents

Power Mosfet

IRF840Active

IRF840 is a 500V N-channel enhancement mode power MOSFET designed for high-voltage switching applications. Featuring low RDS(on), high avalanche capability, and reliable switching performance, it is suitable for switching power supplies, LED drivers, UPS systems, industrial power control, and other power management applications.

Datasheet Inquire Now

Electrical Parameters

Part Number IRF840
Package TO-220C
AEC-Q101 QualifiedNo
Channel Type N
With ESD No
VDS [Max] (V) 500
VGS [Max] (V) ±30
ID [Max] (A) 8.5
RDS(ON)@10V
[Typ] (Ω)
-
RDS(ON)@10V
[Max] (Ω)
850
RDS(ON)@4.5V
[Typ] (Ω)
-
RDS(ON)@4.5V
[Max] (Ω)
-
RDS(ON)@2.5V
[Typ] (Ω)
-
RDS(ON)@2.5V
[Max] (Ω)
-
PD [Max] (W) 147
TJ (°C) -55~+150
Status Active

Product Features

IRF840 500V Drain-Source Voltage (VDS) Low Drain-Source On-Resistance: 0.85Ω High Current Handling Capability up to 8.5A IRF840 Available in TO-220C Package Fast Switching Characteristics IRF840 Excellent Avalanche Ruggedness

Applications

Adapter UPS Power Supply DC Motor

Related Documents

File Name File Category Download

Product News

Applications of the AEC-Q101 qualified PESD1LIN series automotive ESD diodes2025-10-17

BTA16-800BW series Standard Bidirectional Thyristor parameters and specifications2024-08-23

BTA08-800B series Four-Quadrant Bidirectional Thyristor parameters and specifications2024-08-23

BTA08-800C series Four-Quadrant Bidirectional Thyristor parameters and specifications2024-08-23