Small Signal Mosfet

SNM110N10EActive

The SNM110N10E series N-channel MOSFET packaged in TO-263 features low on-resistance. It is particularly suitable for applications in fields such as network communication security monitoring laptops mobile phones TWS Bluetooth headphones smart lighting industrial power supplies etc. It enables fast switching and low power loss within small surface-mount packages.

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Electrical Parameters

Part Number SNM110N10E

Package TO-263

AEC-Q101 QualifiedNo

Channel Type N

With ESD No

VDS [Max] (V) 100

VGS [Max] (V) ±20

ID [Max] (A) 110

RDS(ON)@10V
[Typ] (mΩ) 0.0045

RDS(ON)@10V
[Max] (mΩ) 0.0058

RDS(ON)@4.5V
[Typ] (mΩ) 0.0057

RDS(ON)@4.5V
[Max] (mΩ) 0.0074

RDS(ON)@2.5V
[Typ] (mΩ) -

RDS(ON)@2.5V
[Max] (mΩ) -

PD [Max] (W) 125

TJ (°C) -55 to 150

Status Active

Product Features

Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge PWM Application