Introduction
As consumer electronics, smart devices, and portable terminals continue to evolve towards miniaturization and high speed, PCB space is becoming increasingly limited. Simultaneously, high-speed interfaces such as USB, HDMI, and DisplayPort place higher demands on ESD protection devices.
While traditional SOD-packaged ESD protection devices are widely used, they are increasingly facing challenges in space-constrained designs. The DFN1006-3 (0402) ultra-small package, with its size advantage of only 1.0mm × 0.6mm × 0.5mm, can effectively save PCB layout space while reducing parasitic parameters in high-speed signal lines.
Semiware's SE10P3F06U5.0MA is a 5V, dual-channel unidirectional, low-capacitance ESD protection diode in a DFN1006-3 package, specifically designed for high-speed data interfaces and space-constrained applications.
This device can serve as a compatible replacement for several mainstream DFN1006-3 ESD diodes, including:
- Infineon ESD5V3U2U-03LRH
- Diodes D5V0F2U3LP
- WILLSEMI ESD5302N
- BrightKing UAD8A05L02
- Comchip CPDQ03C5V0USP-HF
I. SE10P3F06U5.0MA Key Features
| Parameter | SE10P3F06U5.0MA |
| Package | DFN1006-3 |
| Dimension | 1.0mm × 0.6mm × 0.5mm |
| VRWM | 5.0V |
| VBR | 6.0V |
| Capacitance | 0.4pF Typ |
| Clamping Voltage | 15V @ 4A |
| Peak Pulse Current IPP | 4A |
| IEC61000-4-2 | ±30kV Air / ±30kV Contact |
| EFT | 40A (5/50ns) |
| Leakage Current | 100nA Typ |
| Direction | Uni-directional |
II. Comparison with Popular DFN1006-3 ESD Diodes
| Part Number | Manufacturer | ESD Air / Contact | Electrical Parameters | Direction |
| SE10P3F06U5.0MA | Semiware | ±20kV / ±20kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 15V @ 4A Cj: 0.4-0.6pF | Uni |
| ESD5V3U2U-03LRH | Infineon | ±20kV / ±20kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 15V @ 3A Cj: 0.4-0.6pF | Uni |
| D5V0F2U3LP | Diodes | ±15kV / ±15kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 10V @ 1A Cj: 0.4-0.65pF | Uni |
| UAD8A05L02 | BrightKing | ±15kV / ±8kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 14V @ 2A Cj: 0.75pF | Uni |
| CPDQ03C5V0USP-HF | Comchip | ±15kV / ±10kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 16V @ 3A Cj: 0.45-0.6pF | Uni |
| ESD5302N | WILLSEMI | ±20kV / ±20kV | VRWM: 5.0V VBR: 7.0V VC @ IPP: 14V @ 4A Cj: 0.45-0.65pF | Uni |
III. Why Choose SE10P3F06U5.0MA as an Alternative?
a. Ultra-Low Capacitance Design
High-speed communication interfaces are highly sensitive to the parasitic capacitance of ESD protection devices. Excessive junction capacitance can lead to:
- Decreased signal integrity
- Increased insertion loss
- Abnormal high-speed data transmission
The SE10P3F06U5.0MA Cj = 0.4-0.6pF provides ESD protection while minimizing the impact on high-speed signals.
Suitable for:
- USB 2.0 / USB 3.0
- HDMI
- DisplayPort
- eSATA
- SIM card interface
- DFN1006-3 ultra-small package, saving PCB space
b. SE10P3F06U5.0MA uses DFN1006-3 package:
Dimensions: 1.0mm × 0.6mm × 0.5mm, compared to traditional ESD packages, it has:
- Smaller PCB footprint
- More flexible layout design
- More suitable for high-density electronic products
Typical applications:
- Smartphones
- Wearable devices
- Smart speakers
- Portable electronic products
c. ±20kV ESD protection capability, improving system reliability
SE10P3F06U5.0MA complies with:
IEC61000-4-2: ±20kV Air Discharge, ±20kV Contact Discharge
Effectively protects interface chips, MCUs and other sensitive components from electrostatic damage.
SE10P3F06U5.0MA Application Circuit
Suitable for space-constrained USB interfaces

IV. Semiware DFN1006-3 ESD Protection Series
| Part Number | IEC61000-4-2 (Air/Contact) | Electrical Characteristics | Uni/Bi-directional |
| SE10P3F06B3.3B-SP | ±30kV / ±30kV | VRWM: 3.3V VBR: 3.6V VC @ IPP: 12V @ 5A Cj: 16.5pF | Bi |
| SE10P3F06U3.3MA | ±20kV / ±20kV | VRWM: 3.3V VBR: 4.2V VC @ IPP: 14V @ 4A Cj: 0.6pF | Uni |
| SE10P3F06U5.0B | ±20kV / ±20kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 10V @ 5.5A Cj: 15pF | Uni |
| SE10P3F06U5.0MA | ±20kV / ±20kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 15V @ 4A Cj: 0.6pF | Uni |
| SE10P3F07B5.0B-SP | ±30kV / ±30kV | VRWM: 5.0V VBR: 5.6V VC @ IPP: 12V @ 6A Cj: 14pF | Bi |
| SE10P3F10B5.0B | ±15kV / ±17kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 30V @ 3A Cj: 10pF | Bi |
| SE10P3F10U5.0MB | ±15kV / ±17kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 19V @ 4A Cj: 0.6pF | Uni |
| SE10P3F20U5.0B | ±30kV / ±30kV | VRWM: 5.0V VBR: 6.0V VC @ IPP: 18V @ 11A Cj: 80pF | Uni |
If you are looking for domestic alternatives to DFN1006-3 ESD diodes such as ESD5V3U2U-03LRH, D5V0F2U3LP, and ESD5302N, please contact us to request samples for testing.


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