Power semiconductor discrete devices can be classified from the following perspectives：
1.According to device structure
- diode
- power transistor（ Bipolar Junction Transistor (BJT)，Junction field effect transistor (JFET)，metal oxide field effect transistor (mosfet)，Insulated gate bipolar transistor (IGBT)）
- thyristor and its derivative devices
2.According to power handling capability
- Low voltage low power semiconductor discrete devices
- Medium power semiconductor discrete devices
- High power semiconductor discrete devices
- High voltage extra high power semiconductor discrete devices
3.According to the nature of the driving signal (except power diodes)
- Current-driven: A device that implements switch control by injecting or extracting current from the control terminal.
- Voltage-driven: A device that implements switch control by applying a voltage signal between the control terminal and the common terminal.
- 4.According to the degree of control
- Uncontrollable type: devices that cannot be turned on and off by control signals, such as power diodes.
- Semi-controlled type: devices that can be turned on by control signals but cannot be turned off, such as thyristors and most of their derivative devices.
- Fully controlled type: devices that can be turned on and off by control signals, such as insulated gate bipolar transistors (IGBTs), power field effect transistors (MOSFETs), gate turn-off thyristors (GTOs), etc.
This classification method can help us better understand the structure and functional characteristics of power semiconductor devices, making it easier to select suitable devices in different applications.
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